Technical Details of HermeS®
Wafer Specifications
Technical data of wafer | |||
---|---|---|---|
Wafer thickness | 500 ±20 μm (min. 280 μm) | ||
Wafer size | 4", 6", 8" | ||
Contact via pitch | 250μm | 200μm | 150μm* |
Contact via diameter | 100μm | 80μm | 50μm* |
Via density | 50k* (6"), 100k* (8") | ||
Via materials | Tungsten (W) – combined with Borofloat®33 and AF 32®eco 33 Iron Nickel (FeNi42) – combined with D 263®T eco (others available on request) |
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Hermeticity | [≤ 1 × 10–9Pa · m3/s], [≤ 1 × 10–8mbar/s], [≤ 1 × 10–8atm cc/s] |
*Under development
Glass Specifications
Technical data of glass | |||
---|---|---|---|
Glass material | Borofloat®33 | AF 32®eco 33 | D 263®T eco |
Coefficient of thermal expansion |
3.25 x 10-6/K (match to Si) |
3.2 x 10-6/K (match to Si) |
7.2 x 10-6/K |
Dielectric constant @ 1MHz | 4.6 | 5.1 | 6.7 |
Refractive index (@ 600 nm) | 1.47 | 1.51 | 1.52 |