HermeS^® Hermetic Through Glass Via Technology
HermeS^® Hermetic Through Glass Via Technology

HermeS^® Hermetic Through Glass Via (TGV) Wafer

Product Description Advantages Applications Technical Details Quality Downloads

Product Description

SCHOTT HermeS^® is a glass substrate with hermetically sealed solid “Through Glass Vias” (TGV). It enables fully gastight and therefore long-term robust enclosures for MEMS devices. The fine-pitched vias allow the reliable conduction of electrical signals and power into and out of the MEMS device. Since HermeS^® can be placed directly under the silicon MEMS, it enables miniaturized, fully hermetic 3D Wafer Level Chip Size Packaging (WLCSP).

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Advantages

Advantages of HermeS^®compared to TSV (Through Silicon Vias)

Superior reliability of the packaging leads to long term performance of the MEMS device due to higher mechanical, thermal and chemical resistance of glass
Excellent RF performance, due to low dielectric constant of glass and highly conductive via materials
Optical transparency of glass enables better processing and quality control during the production process of a MEMS device
Anodic bonding with Silicon is available

SCHOTT HermeS^® enables extremely miniaturized Chip Size Packaging since the Through Glass Vias can be directly attached to the silicon MEMS.

This results in:

~ 80% foot print reduction compared to ceramic package
~ 35% volume reduction compared to ceramic package

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Applications

Our hermetic through glass vias can be used for a wide variety of MEMS applications such as:

Industrial Hermetic MEMS Sensor:
HermeS^® enables long-term, reliable and extremely rugged packaging of industrial sensors.
Medical MEMS:
With HermeS^®, medical electronics can be packaged robustly to withstand body fluids and sterilization cycles over long periods of time.
RF MEMS:
HermeS^® provides superior RF properties through absolute hermeticity in an extremely miniaturized design.

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Technical Details

Technology
SCHOTT HermeS^® uses glass-to-metal sealing (GTMS) technology to provide superior hermeticity in a wafer-scale packaging solution. Please contact us for more information.

Features/ Specifications

Technical data of wafer
Wafer thickness	500 ±20 μm (min. 280 μm)
Wafer size	4", 6", 8"
Contact via pitch	250μm	200μm	150μm*
Contact via diameter	100μm	80μm	50μm*
Via density	50k* (6"), 100k* (8")
Via materials	Tungsten (W) – combined with Borofloat^® 33 and AF 32^® eco 33 Iron Nickel (FeNi42) – combined with D 263^® T eco (others available on request)
Hermeticity	[≤ 1 × 10^–9 Pa · m³/s], [≤ 1 × 10^–8 mbar/s], [≤ 1 × 10^–8 atm cc/s]
Technical data of glass
Glass material	Borofloat^® 33	AF 32^® eco 33	D 263^® T eco
Coefficient of thermal expansion	3.25 x 10^-6/K (match to Si)	3.2 x 10^-6/K (match to Si)	7.2 x 10^-6/K
Dielectric constant @ 1MHz	4.6	5.1	6.7
Refractive index (@ 600 nm)	1.47	1.51	1.52